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NTB125N02R

ON Semiconductor
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 24V 15.9A D2PAK
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Technical Details

Compliance

Lead Free Contains Lead
RoHS Status Non-RoHS Compliant

Technical

Avalanche Energy Rating (Eas) 120 mJ
Pulsed Drain Current-Max (IDM) 250A
Drain to Source Breakdown Voltage 24V
Drain-source On Resistance-Max 0.0062Ohm
Drain Current-Max (Abs) (ID) 95A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 120.5A
Turn-Off Delay Time 27 ns
Fall Time (Typ) 21 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 39ns
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 95A Ta 120.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 3440pF @ 20V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 4.6m Ω @ 20A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 2.72W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.98W Ta 113.6W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 125A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 235
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 24V
Subcategory FET General Purpose Power
HTS Code 8541.29.00.95
Terminal Finish Tin/Lead (Sn/Pb)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
JESD-609 Code e0
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

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