Avalanche Energy Rating (Eas) 120 mJ
Pulsed Drain Current-Max (IDM) 250A
Drain to Source Breakdown Voltage 24V
Drain-source On Resistance-Max 0.0062Ohm
Drain Current-Max (Abs) (ID) 95A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 120.5A
Turn-Off Delay Time 27 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 95A Ta 120.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 3440pF @ 20V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 4.6m Ω @ 20A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.98W Ta 113.6W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 235
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Operating Temperature -55°C~150°C TJ