APT45GR65BSCD10
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
INSULATED GATE BIPOLAR TRANSISTO
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 30V
Td (on/off) @ 25°C 15ns/100ns
Current - Collector Pulsed (Icm) 224A
Gate Charge 203nC
IGBT Type NPT
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 45A
Test Condition 433V, 45A, 4.3 Ω, 15V
Collector Emitter Breakdown Voltage 650V
Reverse Recovery Time 80 ns
Max Collector Current 118A
Collector Emitter Voltage (VCEO) 2.4V
Polarity/Channel Type N-CHANNEL
Power - Max 543W
Input Type Standard
Max Power Dissipation 543W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2001
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 22 Weeks
Alternative Model
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