R6515ENZC8
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V TO PKG
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 60W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 315m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 430μA
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 15A
Drain-source On Resistance-Max 0.315Ohm
Pulsed Drain Current-Max (IDM) 45A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 284 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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