Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish TIN SILVER COPPER
Additional Feature HIGH RELIABILITY
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 960W
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 615 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 245A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 800V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
Turn Off Time-Nom (toff) 935 ns
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 50ns/615ns
Switching Energy 11mJ (on), 9.5mJ (off)
Gate-Emitter Thr Voltage-Max 6.5V