IXFK60N55Q2
RoHS 
RoHS compliant
RoHS compliantPackage TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 550V 60A TO-264
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Buying Options
Total Price: USD $19.41
Unit Price: USD $19.414253
≥1 USD $19.414253
≥10 USD $18.315334
≥100 USD $17.278621
≥500 USD $16.300582
≥1000 USD $15.377914
Inventory: 1131
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HiPerFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 88MOhm
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 735W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 735W
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 88m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 7300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 14 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 57 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 550V
Pulsed Drain Current-Max (IDM) 240A
Avalanche Energy Rating (Eas) 4000 mJ
Dimensions
Height 26.16mm
Length 19.96mm
Width 5.13mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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