IXYP20N120C3
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors GenX3 1200V XPT IGBT
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Dimensions
Width 4.82mm
Length 10.66mm
Height 16mm
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.3mJ (on), 500μJ (off)
Td (on/off) @ 25°C 20ns/90ns
Current - Collector Pulsed (Icm) 96A
Gate Charge 53nC
Turn Off Time-Nom (toff) 220 ns
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 20A
Test Condition 600V, 20A, 10 Ω, 15V
Turn On Time 60 ns
Collector Emitter Saturation Voltage 4V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-220AB
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 278W
Element Configuration Single
Number of Elements 1
Base Part Number IXY*20N120
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 278W
Subcategory Insulated Gate BIP Transistors
Additional Feature AVALANCHE RATED
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series GenX3?, XPT?
Published 2013
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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