HAT1127HWS-E
RoHS
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Package SC-100, SOT-669
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH SOP8
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Technical Details
Technical
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 30W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 4.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5600pF @ 10V
Current - Continuous Drain (Id) @ 25°C 40A Ta
Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +10V, -20V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tape & Reel (TR)
Operating Temperature 150°C
Physical
Package / Case SC-100, SOT-669
Mounting Type Surface Mount
Alternative Model
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