IXYH82N120C3
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 200A 1250W TO247AD
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Buying Options
Total Price: USD $7.06
Unit Price: USD $7.05725
≥1 USD $7.05725
≥10 USD $6.65778
≥100 USD $6.28092
≥500 USD $5.9254
≥1000 USD $5.59
≥3000 USD $5.27358
Inventory: 7082
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Dimensions
Width 5.3mm
Length 16.26mm
Height 21.46mm
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 4.95mJ (on), 2.78mJ (off)
Td (on/off) @ 25°C 29ns/192ns
Current - Collector Pulsed (Icm) 380A
Gate Charge 215nC
Turn Off Time-Nom (toff) 295 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 82A
Test Condition 600V, 80A, 2 Ω, 15V
Turn On Time 119 ns
Collector Emitter Saturation Voltage 2.75V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-247AD
Max Collector Current 200A
Collector Emitter Voltage (VCEO) 1.2kV
Turn-Off Delay Time 192 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 1250W
Turn On Delay Time 29 ns
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 1.04kW
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Max Power Dissipation 1.25kW
Subcategory Insulated Gate BIP Transistors
Additional Feature AVALANCHE RATED
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series GenX3?, XPT?
Published 2008
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 28 Weeks
Alternative Model
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