R6020ANX
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 20A TO-220FM
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Buying Options
Total Price: USD $5.89
Unit Price: USD $5.8872
≥1 USD $5.8872
≥10 USD $5.04592
Inventory: 80
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 26.7 mJ
Pulsed Drain Current-Max (IDM) 80A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.22Ohm
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 20A
Turn-Off Delay Time 230 ns
Fall Time (Typ) 70 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 60 ns
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Input Capacitance (Ciss) (Max) @ Vds 2040pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Rds On (Max) @ Id, Vgs 220m Ω @ 10A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 40 ns
Case Connection ISOLATED
Power Dissipation 50W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 50W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature FAST SWITCHING
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Pbfree Code yes
Published 2012
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 13 Weeks
Alternative Model
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