IXXR100N60B3H1
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.9mJ (on), 2mJ (off)
Td (on/off) @ 25°C 30ns/120ns
Current - Collector Pulsed (Icm) 440A
Gate Charge 143nC
IGBT Type PT
Turn Off Time-Nom (toff) 350 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 70A
Test Condition 360V, 70A, 2 Ω, 15V
Turn On Time 92 ns
Collector Emitter Saturation Voltage 1.5V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 140 ns
Max Collector Current 145A
Collector Emitter Voltage (VCEO) 1.8V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Case Connection ISOLATED
Power Dissipation 400W
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSIP-T3
Pin Count 3
Terminal Position SINGLE
Max Power Dissipation 400W
Subcategory Insulated Gate BIP Transistors
Additional Feature AVALANCHE RATED
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series GenX3?, XPT?
Published 2013
Packaging Tube
Physical
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 6 Weeks
Alternative Model
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