Avalanche Energy Rating (Eas) 240 mJ
Drain to Source Breakdown Voltage 20V
Drain-source On Resistance-Max 0.002Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 150mA
Turn-Off Delay Time 26 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 69nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 31A Ta 150A Tc
Input Capacitance (Ciss) (Max) @ Vds 6290pF @ 10V
Vgs(th) (Max) @ Id 2.45V @ 250μA
Rds On (Max) @ Id, Vgs 2m Ω @ 31A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.8W Ta 89W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ