IXSX80N60B
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 160A 500W PLUS247
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Technical Details
Technical
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW SATURATION VOLTAGE
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 500W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXS*80N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 500W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 160A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 120 ns
Test Condition 480V, 80A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 80A
Turn Off Time-Nom (toff) 450 ns
IGBT Type PT
Gate Charge 240nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 60ns/140ns
Switching Energy 4.2mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 8V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2003
Packaging Tube
Operating Temperature -55°C~150°C TJ
Compliance
RoHS Status RoHS Compliant
Physical
Transistor Element Material SILICON
Weight 7.300002g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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