FET Feature Schottky Diode (Isolated)
DS Breakdown Voltage-Min 20V
Drain-source On Resistance-Max 0.105Ohm
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 2.4A
Turn-Off Delay Time 55 ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.4A Ta
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 10V
Vgs(th) (Max) @ Id 1V @ 1mA
Rds On (Max) @ Id, Vgs 105m Ω @ 2.4A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.25W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Operating Temperature 150°C TJ