IXSX40N60BD1
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 75A 280W PLUS247
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 7.300002g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW SATURATION VOLTAGE
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 280W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXS*40N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 280W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
Reverse Recovery Time 35 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 100 ns
Test Condition 480V, 40A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 40A
Turn Off Time-Nom (toff) 370 ns
Gate Charge 190nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 50ns/110ns
Switching Energy 1.8mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
Fall Time-Max (tf) 200ns
Compliance
RoHS Status RoHS Compliant
Alternative Model
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