IXSH35N120A
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 70A 300W TO247
PDF
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Buying Options
Total Price: USD $12.22
Unit Price: USD $12.21985
≥1 USD $12.21985
≥10 USD $10.0263
≥100 USD $9.7128
≥500 USD $9.3993
≥1000 USD $9.08675
Inventory: 1256
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature HIGH SPEED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXS*35N120
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 80 ns
Power - Max 300W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 400 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 70A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 230 ns
Test Condition 960V, 35A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 35A
Turn Off Time-Nom (toff) 1100 ns
Gate Charge 150nC
Current - Collector Pulsed (Icm) 140A
Td (on/off) @ 25°C 80ns/400ns
Switching Energy 10mJ (off)
Gate-Emitter Voltage-Max 20V
VCEsat-Max 4 V
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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