IPI11N03LA
RoHS
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Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 30A I2PAK
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 25V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 30A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 52W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 52W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 1358pF @ 15V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V
Rise Time 43ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.8 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0115Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 210A
Avalanche Energy Rating (Eas) 80 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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