IXSH25N120A
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 50A 200W TO247AD
PDF
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Buying Options
Total Price: USD $5.36
Unit Price: USD $5.36465
≥1 USD $5.36465
≥10 USD $4.40135
≥100 USD $4.26455
≥500 USD $4.1268
≥1000 USD $3.98905
Inventory: 17251
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 8V
Gate-Emitter Voltage-Max 20V
Switching Energy 9.6mJ (off)
Td (on/off) @ 25°C 100ns/450ns
Current - Collector Pulsed (Icm) 80A
Gate Charge 120nC
Turn Off Time-Nom (toff) 1350 ns
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 25A
Test Condition 960V, 25A, 18 Ω, 15V
Turn On Time 300 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-247AD
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 200W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 35
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW SATURATION VOLTAGE
Terminal Finish Matte Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 6.500007g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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