IRFH4201TRPBF
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 49A 8PQFN
PDF
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Buying Options
Total Price: USD $9.29
Unit Price: USD $9.291
≥1 USD $9.291
≥10 USD $7.62375
≥100 USD $7.3853
≥500 USD $7.1478
≥1000 USD $6.90935
Inventory: 1242
Minimum: 1
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Technical Details
Physical
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 5
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Number of Elements 1
Power Dissipation-Max 3.5W Ta 156W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 0.95m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.1V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 13V
Current - Continuous Drain (Id) @ 25°C 49A Ta
Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V
Rise Time 43 ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 49A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 478 mJ
Dimensions
Height 900μm
Length 6mm
Width 5mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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