Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Current - Collector Pulsed (Icm) 1200A
Turn Off Time-Nom (toff) 555 ns
Vce(on) (Max) @ Vge, Ic 1.15V @ 15V, 100A
Collector Emitter Breakdown Voltage 300V
Max Collector Current 400A
Collector Emitter Voltage (VCEO) 1.15V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Qualification Status Not Qualified
Base Part Number IXG*400N30
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 1kW
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ