2SD2401
RoHS
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Package 3-ESIP
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN DARL 150V 12A MT200
PDF
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Buying Options
Total Price: USD $19.38
Unit Price: USD $19.37525
≥1 USD $19.37525
≥10 USD $15.8973
≥100 USD $15.40045
≥500 USD $14.9036
≥1000 USD $14.40675
Inventory: 1160
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 3-ESIP
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Bulk
Published 2001
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature BUILT-IN BIAS RESISTOR
Subcategory Other Transistors
Max Power Dissipation 150W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration DARLINGTON WITH BUILT-IN RESISTOR
Power - Max 150W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 12A
DC Current Gain (hFE) (Min) @ Ic, Vce 5000 @ 7A 4V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 2.5V @ 7mA, 7A
Collector Emitter Breakdown Voltage 150V
Transition Frequency 55MHz
Frequency - Transition 55MHz
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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