Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 320μJ (off)
Td (on/off) @ 25°C 25ns/85ns
Current - Collector Pulsed (Icm) 120A
Turn Off Time-Nom (toff) 215 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 32A
Test Condition 480V, 32A, 4.7 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 45A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 85 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Qualification Status Not Qualified
Base Part Number IXG*32N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 140W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HiPerFAST?, Lightspeed?
Operating Temperature -55°C~150°C TJ