IRF6645TR1PBF
RoHS
/
Package DirectFET? Isometric SJ
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 5.7A DIRECTFET
PDF
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Buying Options
Total Price: USD $0.94
Unit Price: USD $0.94335
≥1 USD $0.94335
≥10 USD $0.77425
≥100 USD $0.74955
≥500 USD $0.7258
≥1000 USD $0.7011
Inventory: 1166
Minimum: 1
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Technical Details
Physical
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric SJ
Number of Pins 5
Supplier Device Package DIRECTFET? SJ
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 35MOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 5.7A
Number of Elements 1
Power Dissipation-Max 2.2W Ta 42W Tc
Element Configuration Single
Power Dissipation 42W
Turn On Delay Time 9.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 35mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 4.9V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.7A Ta 25A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 5ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.1 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 4.5A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Input Capacitance 890pF
Recovery Time 47 ns
Drain to Source Resistance 28mOhm
Rds On Max 35 mΩ
Nominal Vgs 3 V
Dimensions
Height 530μm
Length 4.826mm
Width 3.95mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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