IXGR32N170H1
RoHS
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Package ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1700V 38A 200W ISOPLUS247
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Technical Details
Technical
Turn Off Time-Nom (toff) 920 ns
IGBT Type NPT
Gate Charge 155nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 45ns/270ns
Switching Energy 10.6mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 500ns
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 21A
Test Condition 1360V, 21A, 2.7 Ω, 15V
Turn On Time 90 ns
Collector Emitter Saturation Voltage 3.5V
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Breakdown Voltage 1.7kV
JEDEC-95 Code TO-247AD
Reverse Recovery Time 230 ns
Max Collector Current 38A
Collector Emitter Voltage (VCEO) 1.7kV
Rise Time 250ns
Transistor Application POWER CONTROL
Power - Max 200W
Input Type Standard
Case Connection ISOLATED
Element Configuration Single
Polarity NPN
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number IXG*32N170
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2004
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case ISOPLUS247?
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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