NTP90N02G
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
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Buying Options
Total Price: USD $28.35
Unit Price: USD $28.34705
≥1 USD $28.34705
≥10 USD $23.25885
≥100 USD $22.5321
≥500 USD $21.80535
≥1000 USD $21.0786
Inventory: 3803
Minimum: 1
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 85W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.8m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2.12pF @ 20V
Current - Continuous Drain (Id) @ 25°C 90A Ta
Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
Drain to Source Voltage (Vdss) 24V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 90A
Drain-source On Resistance-Max 0.0058Ohm
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 24V
Avalanche Energy Rating (Eas) 733 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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