IXGP50N33TBM-A
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 330V 30A 50W TO220AB
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Gate Charge 42nC
IGBT Type Trench
Turn Off Time-Nom (toff) 344 ns
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 25A
Turn On Time 45 ns
Collector Emitter Breakdown Voltage 330V
JEDEC-95 Code TO-220AB
Max Collector Current 30A
Collector Emitter Voltage (VCEO) 1.6V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 50W
Input Type Standard
Case Connection ISOLATED
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 50W
Terminal Finish Matte Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2008
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 2.299997g
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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