DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 60A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 14.9A
Turn-Off Delay Time 130 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 136nC @ 10V
Current - Continuous Drain (Id) @ 25°C 12.6A Ta
Input Capacitance (Ciss) (Max) @ Vds 5890pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 8m Ω @ 14.9A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ