IXGP42N30C3
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 300V 223W TO220AB
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Technical Details
Supply Chain
Factory Lead Time 24 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series GenX3?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 223W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.85V
Max Collector Current 42A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 300V
Turn On Time 43 ns
Test Condition 200V, 21A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 42A
Turn Off Time-Nom (toff) 229 ns
IGBT Type PT
Gate Charge 76nC
Current - Collector Pulsed (Icm) 250A
Td (on/off) @ 25°C 21ns/113ns
Switching Energy 120μJ (on), 150μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 120ns
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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