Avalanche Energy Rating (Eas) 114 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 240A
Drain-source On Resistance-Max 0.007Ohm
Drain Current-Max (Abs) (ID) 80A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 5V
Current - Continuous Drain (Id) @ 25°C 80A Ta
Input Capacitance (Ciss) (Max) @ Vds 2.44pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 7m Ω @ 40A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 68W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status COMMERCIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -65°C~175°C TJ