IXGP36N60A3
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT
PDF
/
Buying Options
Total Price: USD $2.9
Unit Price: USD $2.897552
≥1 USD $2.897552
≥10 USD $2.502491
≥100 USD $2.268332
≥500 USD $3.40385
≥1000 USD $3.28985
≥3000 USD $2.94975
Inventory: 16
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 740μJ (on), 3mJ (off)
Td (on/off) @ 25°C 18ns/330ns
Current - Collector Pulsed (Icm) 200A
Gate Charge 80nC
IGBT Type PT
Turn Off Time-Nom (toff) 1000 ns
Vce(on) (Max) @ Vge, Ic 1.4V @ 15V, 30A
Test Condition 400V, 30A, 5 Ω, 15V
Turn On Time 43 ns
Power Dissipation-Max (Abs) 220W
Voltage - Collector Emitter Breakdown (Max) 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 23ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 220W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Matte Tin (Sn)
Number of Terminations 3
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series GenX3?
Published 2013
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
Supply Chain
Factory Lead Time 26 Weeks
Alternative Model
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