Drain to Source Breakdown Voltage 620V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2.7A
Turn-Off Delay Time 22 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.7A Tc
Input Capacitance (Ciss) (Max) @ Vds 385pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Rds On (Max) @ Id, Vgs 2.5 Ω @ 1.4A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 20W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ