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IXGP20N120A3

IXYS
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 1200V 40A 180W TO220
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Buying Options
Total Price: USD $5.8
Unit Price: USD $5.7992
≥1 USD $5.7992
≥10 USD $4.598704
≥100 USD $3.941696
≥500 USD $3.50372
≥1000 USD $3.000061
≥3000 USD $2.824879
Inventory: 67
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 2.299997g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 180W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*20N120
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 180W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 16 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 290 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 40A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.3V
Turn On Time 66 ns
Test Condition 960V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Turn Off Time-Nom (toff) 1530 ns
IGBT Type PT
Gate Charge 50nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 16ns/290ns
Switching Energy 2.85mJ (on), 6.47mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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