Drain to Source Breakdown Voltage -40V
Drain-source On Resistance-Max 6Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -250mA
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 175mA Tj
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Vgs(th) (Max) @ Id 2V @ 1mA
Rds On (Max) @ Id, Vgs 6 Ω @ 500mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 740mW Ta
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Technology MOSFET (Metal Oxide)
Additional Feature LOW THRESHOLD
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ