IXGK120N60B
RoHS
/
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 200A 660W TO264AA
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Weight 10.000011g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HiPerFAST?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 660W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*120N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 660W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 200A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 120 ns
Test Condition 480V, 100A, 2.4 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 120A
Turn Off Time-Nom (toff) 540 ns
IGBT Type PT
Gate Charge 350nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 60ns/200ns
Switching Energy 2.4mJ (on), 5.5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 280ns
Compliance
RoHS Status RoHS Compliant
Alternative Model
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