IXTR68P20T
RoHS 
RoHS compliant
RoHS compliantPackage ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
DISCMSFT PCHAN-TRENCH GATE ISOPL
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 2500 mJ
DS Breakdown Voltage-Min 200V
Pulsed Drain Current-Max (IDM) 200A
Drain-source On Resistance-Max 0.064Ohm
Drain Current-Max (Abs) (ID) 44A
Vgs (Max) ±15V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V
Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Input Capacitance (Ciss) (Max) @ Vds 33400pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 64m Ω @ 34A, 10V
Transistor Application SWITCHING
FET Type P-Channel
Case Connection ISOLATED
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 270W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSIP-T3
Pin Count 3
Reach Compliance Code compliant
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature AVALANCHE RATED, UL RECOGNIZED
ECCN Code EAR99
Number of Terminations 3
Part Status Active
Published 2012
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case ISOPLUS247?
Mounting Type Through Hole
Supply Chain
Factory Lead Time 1 Weeks
Alternative Model
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