IXGH90N60B3
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 75A 660W TO247
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Buying Options
Total Price: USD $3.62
Unit Price: USD $3.624158
≥1 USD $3.624158
≥10 USD $3.419018
≥100 USD $3.225485
≥500 USD $3.042914
≥1000 USD $2.870673
Inventory: 1139
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 24 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.500007g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series GenX3?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 660W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 660W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 75A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 72 ns
Test Condition 480V, 60A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 90A
Turn Off Time-Nom (toff) 473 ns
IGBT Type PT
Gate Charge 172nC
Current - Collector Pulsed (Icm) 500A
Td (on/off) @ 25°C 31ns/150ns
Switching Energy 1.32mJ (on), 1.37mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 250ns
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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