Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) Not Applicable
Additional Feature HIGH SPEED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*25N100
Qualification Status Not Qualified
Element Configuration Single
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 5mJ (off)
Td (on/off) @ 25°C 100ns/500ns
Current - Collector Pulsed (Icm) 100A
Turn Off Time-Nom (toff) 1520 ns
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 25A
Test Condition 800V, 25A, 33 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) 1000V
Collector Emitter Breakdown Voltage 1kV
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 1kV
Turn-Off Delay Time 500 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Turn On Delay Time 100 ns
Case Connection COLLECTOR