IXGH10N100U1
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1000V 20A 100W TO247AD
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 2mJ (off)
Td (on/off) @ 25°C 100ns/550ns
Current - Collector Pulsed (Icm) 40A
Gate Charge 52nC
Turn Off Time-Nom (toff) 1850 ns
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 10A
Test Condition 800V, 10A, 150 Ω, 15V
Turn On Time 300 ns
Voltage - Collector Emitter Breakdown (Max) 1000V
Collector Emitter Breakdown Voltage 1kV
JEDEC-95 Code TO-247AD
Reverse Recovery Time 60ns
Max Collector Current 20A
Collector Emitter Voltage (VCEO) 3.5V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Base Part Number IXG*10N100
Current Rating 20A
Terminal Position SINGLE
Max Power Dissipation 100W
Voltage - Rated DC 1kV
Subcategory Insulated Gate BIP Transistors
Number of Terminations 3
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Obsolete
Published 1997
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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