Drain to Source Breakdown Voltage 400V
Drain-source On Resistance-Max 5Ohm
Drain Current-Max (Abs) (ID) 0.26A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 260mA
Turn-Off Delay Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Current - Continuous Drain (Id) @ 25°C 260mA Tj
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 25V
Vgs(th) (Max) @ Id 2V @ 2mA
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.3W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ