IXGA12N60B
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 24A 100W TO263AA
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 500μJ (off)
Td (on/off) @ 25°C 20ns/150ns
Current - Collector Pulsed (Icm) 48A
Gate Charge 32nC
Turn Off Time-Nom (toff) 400 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A
Test Condition 480V, 12A, 18 Ω, 15V
Turn On Time 40 ns
Collector Emitter Breakdown Voltage 600V
Max Collector Current 24A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 100W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Base Part Number IXG*12N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Max Power Dissipation 100W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series HiPerFAST?
Published 2002
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 1.59999g
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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