Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 4.6mJ (on), 3.4mJ (off)
Current - Collector Pulsed (Icm) 76A
Turn Off Time-Nom (toff) 570 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 30A
Test Condition 600V, 30A, 47 Ω, 15V
Collector Emitter Saturation Voltage 2.4V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 40ns
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 1.2kV
Turn-Off Delay Time 500 ns
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Turn On Delay Time 100 ns
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Base Part Number IXD*30N120
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 300W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW SWITCHING LOSSES
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ