Avalanche Energy Rating (Eas) 98 mJ
Pulsed Drain Current-Max (IDM) 177A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0116Ohm
Drain Current-Max (Abs) (ID) 13.5A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 59A
Turn-Off Delay Time 21.9 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 11.5V
Current - Continuous Drain (Id) @ 25°C 8.6A Ta 59A Tc
Input Capacitance (Ciss) (Max) @ Vds 2113pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 7m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 870mW Ta 41.7W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ