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NTMFS4841NHT3G

ON Semiconductor
RoHS
/
Package 8-PowerTDFN, 5 Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 8.6A SO-8FL
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

Avalanche Energy Rating (Eas) 98 mJ
Pulsed Drain Current-Max (IDM) 177A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0116Ohm
Drain Current-Max (Abs) (ID) 13.5A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 59A
Turn-Off Delay Time 21.9 ns
Fall Time (Typ) 2.9 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 20.6ns
Gate Charge (Qg) (Max) @ Vgs 33nC @ 11.5V
Current - Continuous Drain (Id) @ 25°C 8.6A Ta 59A Tc
Input Capacitance (Ciss) (Max) @ Vds 2113pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 7m Ω @ 30A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 5.7W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 870mW Ta 41.7W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-F6
Pin Count 8
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Terminal Form FLAT
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2009
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Package / Case 8-PowerTDFN, 5 Leads
Mounting Type Surface Mount
Mount Surface Mount

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