Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Current - Collector Pulsed (Icm) 13A
Turn Off Time-Nom (toff) 252 ns
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 2A
Voltage - Collector Emitter Breakdown (Max) 2500V
Collector Emitter Breakdown Voltage 2.5kV
Reverse Recovery Time 920 ns
Collector Emitter Voltage (VCEO) 2.5kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 32W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ