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Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
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Buying Options
Total Price: USD $145.91
Unit Price: USD $145.909142
≥1 USD $145.909142
≥200 USD $58.219238
≥500 USD $56.27352
≥1000 USD $55.312477
Inventory: 4138
Minimum: 1
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Technical Details

Physical

Mount Chassis Mount
Number of Pins 4
Transistor Element Material SILICON

Technical

Pbfree Code yes
Number of Terminations 4
Subcategory Other Transistors
Terminal Position RADIAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Operating Temperature (Max) 200°C
Number of Elements 1
Configuration SINGLE
Power Dissipation-Max 90W
Case Connection BASE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 70V
Max Collector Current 6A
Collector Emitter Breakdown Voltage 70V
Gain 10.8 dB
Collector Base Voltage (VCBO) 70V
Highest Frequency Band L B
Collector-Base Capacitance-Max 16pF

Compliance

RoHS Status RoHS Compliant

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