IXBH42N170
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 1.7KV 80A 3-Pin(3+Tab) TO-247AD
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Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2008
Series BIMOSFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.7kV
Max Power Dissipation 360W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 75A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXB*42N170
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 360W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 45 ns
Transistor Application POWER CONTROL
Rise Time 35 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 365 ns
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 80A
Reverse Recovery Time 1.32μs
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 224 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 42A
Turn Off Time-Nom (toff) 1070 ns
Gate Charge 188nC
Current - Collector Pulsed (Icm) 300A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Dimensions
Height 21.46mm
Length 16.26mm
Width 5.3mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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