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IXBH42N170

IXYS
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description Trans IGBT Chip N-CH 1.7KV 80A 3-Pin(3+Tab) TO-247AD
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Dimensions

Width 5.3mm
Length 16.26mm
Height 21.46mm

Technical

Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Current - Collector Pulsed (Icm) 300A
Gate Charge 188nC
Turn Off Time-Nom (toff) 1070 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 42A
Turn On Time 224 ns
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Breakdown Voltage 1.7kV
Reverse Recovery Time 1.32μs
Max Collector Current 80A
Collector Emitter Voltage (VCEO) 1.7kV
Turn-Off Delay Time 365 ns
Polarity/Channel Type N-CHANNEL
Rise Time 35 ns
Transistor Application POWER CONTROL
Turn On Delay Time 45 ns
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 360W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number IXB*42N170
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 75A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 360W
Voltage - Rated DC 1.7kV
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series BIMOSFET?
Published 2008
Packaging Bulk
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 6.500007g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 17 Weeks

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