Drain to Source Breakdown Voltage 50V
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 100mA
Turn-Off Delay Time 190 ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4V
Gate Charge (Qg) (Max) @ Vgs 1.57nC @ 10V
Current - Continuous Drain (Id) @ 25°C 100mA Ta
Input Capacitance (Ciss) (Max) @ Vds 6.6pF @ 10V
Rds On (Max) @ Id, Vgs 7.8 Ω @ 50mA, 4V
Element Configuration Single
Power Dissipation-Max 250mW Ta
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ