IXBH2N250
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 2500V 5A 32W TO247
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Buying Options
Total Price: USD $19.36
Unit Price: USD $19.3553
≥1 USD $19.3553
≥10 USD $15.88115
≥100 USD $15.38525
≥500 USD $14.8884
≥1000 USD $14.3925
≥3000 USD $12.90385
Inventory: 647
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series BIMOSFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 32W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 32W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.5V
Max Collector Current 5A
Reverse Recovery Time 920 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 2.5kV
Voltage - Collector Emitter Breakdown (Max) 2500V
Turn On Time 310 ns
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 2A
Turn Off Time-Nom (toff) 252 ns
Gate Charge 10.6nC
Current - Collector Pulsed (Icm) 13A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Compliance
RoHS Status ROHS3 Compliant
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