IXFA10N60P
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 10A D2-PAK
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Buying Options
Total Price: USD $3.64
Unit Price: USD $3.6432
≥1 USD $3.6432
≥10 USD $2.890272
≥100 USD $2.477376
≥500 USD $2.202094
≥1000 USD $1.885541
≥3000 USD $1.775435
Inventory: 346
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 500 mJ
Pulsed Drain Current-Max (IDM) 25A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.74Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 10A
Turn-Off Delay Time 65 ns
Fall Time (Typ) 21 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 27ns
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Input Capacitance (Ciss) (Max) @ Vds 1610pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 1mA
Rds On (Max) @ Id, Vgs 740m Ω @ 5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 200W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 200W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 10A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 600V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series HiPerFET?, PolarP2?
Published 2010
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 30 Weeks
Alternative Model
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