IRGSL10B60KDPBF
RoHS
/
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 22A 156W TO220-3
PDF
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Buying Options
Total Price: USD $1.51
Unit Price: USD $1.5136
≥1 USD $1.5136
Inventory: 1157
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.826mm
Length 10.668mm
Height 9.652mm
Technical
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 140μJ (on), 250μJ (off)
Td (on/off) @ 25°C 30ns/230ns
Current - Collector Pulsed (Icm) 44A
Gate Charge 38nC
IGBT Type NPT
Turn Off Time-Nom (toff) 276 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 10A
Test Condition 400V, 10A, 47 Ω, 15V
Turn On Time 50 ns
Collector Emitter Saturation Voltage 2.2V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 90 ns
Max Collector Current 22A
Collector Emitter Voltage (VCEO) 2.2V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Input Type Standard
Power Dissipation 156W
Element Configuration Single
Rise Time-Max 28 ns
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 156W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 2.084002g
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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