EPC2007
RoHS
/
Package Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
TRANS GAN 100V 6A BUMPED DIE
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die Outline (5-Solder Bar)
Technical
Operating Temperature -40°C~125°C TJ
Packaging Cut Tape (CT)
Published 2013
Series eGaN?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology GaNFET (Gallium Nitride)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 30mOhm @ 6A, 5V
Vgs(th) (Max) @ Id 2.5V @ 1.2mA
Input Capacitance (Ciss) (Max) @ Vds 205pF @ 50V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 5V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) +6V, -5V
Continuous Drain Current (ID) 6A
Input Capacitance 205pF
Rds On Max 30 mΩ
Compliance
RoHS Status RoHS Compliant
Alternative Model
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