EPC2007
RoHS
/
Package Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
TRANS GAN 100V 6A BUMPED DIE
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Rds On Max 30 mΩ
Input Capacitance 205pF
Continuous Drain Current (ID) 6A
Vgs (Max) +6V, -5V
Drive Voltage (Max Rds On,Min Rds On) 5V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 5V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Input Capacitance (Ciss) (Max) @ Vds 205pF @ 50V
Vgs(th) (Max) @ Id 2.5V @ 1.2mA
Rds On (Max) @ Id, Vgs 30mOhm @ 6A, 5V
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series eGaN?
Published 2013
Packaging Cut Tape (CT)
Operating Temperature -40°C~125°C TJ
Physical
Supplier Device Package Die Outline (5-Solder Bar)
Package / Case Die
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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