IRGR3B60KD2TRRP
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 7.8A 52W DPAK
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Buying Options
Total Price: USD $2.77
Unit Price: USD $2.76545
≥1 USD $2.76545
≥10 USD $2.26955
≥100 USD $2.1983
≥500 USD $2.12705
≥1000 USD $2.05675
Inventory: 1136
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 52W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRGR3B60KD2PBF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 22ns
Element Configuration Single
Input Type Standard
Power - Max 52W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 7.8A
Reverse Recovery Time 77 ns
JEDEC-95 Code TO-252AA
Collector Emitter Breakdown Voltage 600V
Turn On Time 35 ns
Test Condition 400V, 3A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 3A
Turn Off Time-Nom (toff) 211 ns
IGBT Type NPT
Gate Charge 13nC
Current - Collector Pulsed (Icm) 15.6A
Td (on/off) @ 25°C 18ns/110ns
Switching Energy 62μJ (on), 39μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 105ns
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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